Phototransistors Photo Transistor
Products specifications
Rise Time | 7 us |
Fall Time | 7 us |
Product | Phototransistors |
Maximum On-State Collector Current | 3.6 mA |
Pd - Power Dissipation | 250 mW |
Peak Wavelength | 890 nm |
Collector-Emitter Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 125 C |
Dark Current | 100 nA |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 30 V |
Minimum Operating Temperature | - 65 C |