Phototransistors Photo Transistor
Lead Time: 119 Days
Products specifications
Operating Supply Voltage | 890 nm |
Peak Wavelength | 890 nm, Through Hole |
Maximum Operating Temperature | + 125 C, - 65 C |
Collector-Emitter Saturation Voltage | 30 V |
Maximum On-State Collector Current | 5.4 mA |
Collector-Emitter Breakdown Voltage | 30 V |
Rise Time | 100 nA, 7 us |
Series | + 125 C |
Collector- Emitter Voltage VCEO Max | 30 V, 5.4 mA |
Minimum Operating Temperature | - 65 C, 250 mW |
Pd - Power Dissipation | 250 mW, 7 us |
Mounting Style | Through Hole, TO-18-3 |
Dark Current | 100 nA |
Product | Phototransistors |
Fall Time | 7 us |