Phototransistors NPN PHOTOTRANSISTOR
Products specifications
Pd - Power Dissipation | 50 mW |
Fall Time | 20 us |
Collector-Emitter Breakdown Voltage | 50 V |
Collector-Emitter Saturation Voltage | 0.4 V |
Rise Time | 20 us |
Product | Phototransistors |
Maximum Operating Temperature | + 125 C |
Mounting Style | Panel Mount |
Minimum Operating Temperature | - 55 C |
Collector- Emitter Voltage VCEO Max | 50 V |
Dark Current | 25 nA |