Phototransistors Photo Transistor
Products specifications
Dark Current | 100 nA |
Maximum Operating Temperature | + 100 C |
Mounting Style | Through Hole |
Collector-Emitter Saturation Voltage | 0.4 V |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 30 V |
Collector-Emitter Breakdown Voltage | 30 V |
Pd - Power Dissipation | 100 mW |
Peak Wavelength | 890 nm |
Product | Phototransistors |