Phototransistors Photo Transistor
Products specifications
Collector-Emitter Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 100 C |
Minimum Operating Temperature | - 40 C |
Mounting Style | Through Hole |
Dark Current | 100 nA |
Product | Phototransistors |
Collector-Emitter Saturation Voltage | 0.4 V |
Collector- Emitter Voltage VCEO Max | 30 V |
Pd - Power Dissipation | 100 mW |