Phototransistors Narrow Rcvng Angle 935nm
Lead Time: 119 Days
Products specifications
Pd - Power Dissipation | 100 mW |
Maximum Operating Temperature | + 100 C |
Product | Phototransistors |
Dark Current | 100 nA |
Collector- Emitter Voltage VCEO Max | 30 V |
Peak Wavelength | 935 nm |
Collector-Emitter Breakdown Voltage | 30 V |
Maximum On-State Collector Current | 5.95 mA |
Mounting Style | Through Hole |
Collector-Emitter Saturation Voltage | 0.4 V |
Minimum Operating Temperature | - 40 C |