MOSFET 500V 9A 0.9Ohm Sng N-Chan Pwr MOSFET
Products specifications
Pd - Power Dissipation | 50 W |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 500 V |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 24.5 nC |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 9 A |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Tube |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 900 mOhms |
Channel Mode | Enhancement |
Configuration | Single |