MOSFET 500V 9Amp N channel Mosfet
Products specifications
Id - Continuous Drain Current | 9 A |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Mounting Style | Through Hole |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |
Channel Mode | Enhancement |
Pd - Power Dissipation | - |
Vds - Drain-Source Breakdown Voltage | 500 V |
Qg - Gate Charge | 44 nC |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 720 mOhms |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |