MOSFET 900V 9Amp 1,4ohm N channel Mosfet
Products specifications
Mounting Style | Through Hole |
Qg - Gate Charge | 72 nC |
Technology | Si |
Id - Continuous Drain Current | 9 A |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 290 W |
Packaging | Reel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Configuration | Single |
Rds On - Drain-Source Resistance | 1.13 Ohms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |