MOSFET Dual 20V P channel Mosfet
Products specifications
Technology | Si |
Pd - Power Dissipation | 2 W |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Vds - Drain-Source Breakdown Voltage | 20 V |
Transistor Polarity | P-Channel, PNP |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Dual |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Qg - Gate Charge | 6 nC |
Packaging | Cut Tape, Reel |
Rds On - Drain-Source Resistance | 48 mOhms |
Id - Continuous Drain Current | 4.7 A |
Number of Channels | 2 Channel |