MOSFET Dual 20V P channel MOSFET
Products specifications
Id - Continuous Drain Current | 4.7 A |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Channel Mode | Enhancement |
Technology | Si |
Qg - Gate Charge | 6 nC |
Configuration | Dual |
Rds On - Drain-Source Resistance | 60 mOhms |
Number of Channels | 2 Channel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Packaging | Reel |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 4.5 V |
Transistor Polarity | P-Channel |
Pd - Power Dissipation | 2 W |