MOSFET 20V Dual N channel MOSFET
Products specifications
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 20 V |
Qg - Gate Charge | 4.86 nC |
Technology | Si |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 1.6 W |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 21 mOhms |
Id - Continuous Drain Current | 6 A |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Vgs - Gate-Source Voltage | 4.5 V |