MOSFET MOSFET, Single P-Ch, -20V, -6.4A
Products specifications
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Qg - Gate Charge | 12 nC |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2.5 W |
Configuration | Single |
Packaging | Reel |
Rds On - Drain-Source Resistance | 31 mOhms |
Id - Continuous Drain Current | 6.4 A |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 400 mV |