TSM900N06CW RPG

MOSFETs 60V, 5A, Single N-Channel Power MOSFET
Lead Time: 112 Days

SKU: TSM900N06CW RPG

Availability: 561 in stock

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MOSFETs 60V, 5A, Single N-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Configuration	Single
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	9.3 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	4.7 W
Vgs th - Gate-Source Threshold Voltage	1.2 V
Packaging	Cut Tape, Reel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	76 mOhms
Minimum Operating Temperature	-

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Products specifications

Configuration	Single
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	9.3 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	4.7 W
Vgs th - Gate-Source Threshold Voltage	1.2 V
Packaging	Cut Tape, Reel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	76 mOhms
Minimum Operating Temperature	-