MOSFET 60V 11A N Channel Power Mosfet
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 25 W |
Packaging | Reel |
Qg - Gate Charge | 9.3 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Id - Continuous Drain Current | 11 A |
Minimum Operating Temperature | - |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 76 mOhms |