MOSFETs 60V, 11A, Single N-Channel Power MOSFET
Products specifications
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 25 W |
Technology | Si |
Rds On - Drain-Source Resistance | 76 mOhms |
Number of Channels | 1 Channel |
Qg - Gate Charge | 9.3 nC |
Packaging | Cut Tape, Reel |
Mounting Style | Through Hole |
Minimum Operating Temperature | - |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 11 A |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vds - Drain-Source Breakdown Voltage | 60 V |