MOSFET 800V 8A N Channel Mosfet
Products specifications
Id - Continuous Drain Current | 8 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Vds - Drain-Source Breakdown Voltage | 800 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 250 W |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Tube |
Qg - Gate Charge | 41 nC |
Minimum Operating Temperature | - 55 C |
Technology | Si |