MOSFET 800V 8A N Channel Power Mosfet
Products specifications
Qg - Gate Charge | 41 nC |
Packaging | Tube |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 8 A |
Pd - Power Dissipation | 40.3 W |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |