MOSFET 100V 81Amp N channel Mosfet
Products specifications
Pd - Power Dissipation | 210 W |
Configuration | Single |
Rds On - Drain-Source Resistance | 9 mOhms |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 154 nC |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 100 V |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Reel |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 81 A |