MOSFET -30V, 13A, Comp. P- Channel Power MOSFET
Products specifications
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 13 A |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 18 mOhms |
Technology | Si |
Pd - Power Dissipation | 6 W |
Qg - Gate Charge | 21.5 nC |
Number of Channels | 1 Channel |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Reel |