MOSFET 30V, 15A, Comp. N- Channel Power MOSFET
Products specifications
Qg - Gate Charge | 14 nC |
Pd - Power Dissipation | 6 W |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 10 mOhms |
Configuration | Single |
Id - Continuous Drain Current | 15 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Packaging | Reel |
Vgs - Gate-Source Voltage | 10 V |