MOSFET 800V Power MOSFET Superjunction N-chan
Products specifications
Vds - Drain-Source Breakdown Voltage | 800 V |
Pd - Power Dissipation | 110 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Tube |
Id - Continuous Drain Current | 6 A |
Rds On - Drain-Source Resistance | 800 mOhms |
Technology | Si |
Qg - Gate Charge | 19.6 nC |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Minimum Operating Temperature | - 55 C |