MOSFETs 800V, 12A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 800 V |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 69 W |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 51 nC |
Configuration | Single |
Packaging | Tube |
Id - Continuous Drain Current | 12 A |
Mounting Style | Through Hole |
Technology | Si |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 300 mOhms |
Number of Channels | 1 Channel |