MOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm
Products specifications
Rds On - Drain-Source Resistance | 900 mOhms |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 110 W |
Configuration | Single |
Qg - Gate Charge | 19.4 nC |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 800 V |
Technology | Si |
Id - Continuous Drain Current | 5.5 A |
Packaging | Tube |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |