MOSFET 75V 80A N Channel Mosfet
Products specifications
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 113.6 W, 2 W |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Packaging | Tube |
Id - Continuous Drain Current | 80 A |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 6 mOhms |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 75 V |
Configuration | Single |
Qg - Gate Charge | 91.5 nC |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |