MOSFET 650V 7A Single NChnl Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Qg - Gate Charge | 25 nC |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 1.35 Ohms |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Mounting Style | Through Hole |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 50 W |
Id - Continuous Drain Current | 7 A |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Channel Mode | Enhancement |