MOSFET 650V, 7A, 1.35 Single N-Channel Power MOSFET
Products specifications
Transistor Polarity | N-Channel |
Packaging | Reel |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 7 A |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 650 V |
Qg - Gate Charge | 24 nC |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 44.6 W |