MOSFET 600V, 7A, 1.2 Single N-Channel Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 1.07 Ohms |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Configuration | Single |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 7 A |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 44.6 W |
Mounting Style | Through Hole |
Qg - Gate Charge | 24 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |