MOSFET 900V 7A N Channel Power Mosfet
Products specifications
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 7 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 1.52 Ohms |
Pd - Power Dissipation | 40.3 W |
Vds - Drain-Source Breakdown Voltage | 900 V |
Packaging | Tube |
Qg - Gate Charge | 49 nC |
Channel Mode | Enhancement |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |