MOSFET MOSFET, Single, N-Ch SJ G2, 700V, 3A
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 700 V |
Qg - Gate Charge | 7.4 nC |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 4 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Id - Continuous Drain Current | 3 A |
Transistor Polarity | N-Channel |
Technology | Si |
Pd - Power Dissipation | 28 W |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |