MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm
Products specifications
Pd - Power Dissipation | 20 W |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Qg - Gate Charge | 9.7 nC |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 700 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 900 mOhms |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 4.5 A |
Packaging | Tube |
Technology | Si |