MOSFET Power MOSFET, N-CHAN 700V, 8A, 600mOhm
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 700 V |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 8 A |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 500 mOhms |
Channel Mode | Enhancement |
Pd - Power Dissipation | 83 W |
Qg - Gate Charge | 12.6 nC |
Technology | Si |