MOSFET 700V 8A N-Channel Power MOSFET,
Products specifications
Qg - Gate Charge | 12.6 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 500 mOhms |
Technology | Si |
Number of Channels | 1 Channel |
Packaging | Tube |
Mounting Style | Through Hole |
Configuration | Single |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 8 A |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 700 V |