MOSFET 700V, 8A, 0.6 N Channel Power Mosfet
Products specifications
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 8 A |
Qg - Gate Charge | 12.6 nC |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 530 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Packaging | Reel |
Pd - Power Dissipation | 83 W |
Channel Mode | Enhancement |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 700 V |