MOSFET 700V Power MOSFET Superjunction N-chan
Products specifications
Vds - Drain-Source Breakdown Voltage | 700 V |
Packaging | Tube |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 380 mOhms |
Qg - Gate Charge | 18.8 nC |
Configuration | Single |
Id - Continuous Drain Current | 11 A |
Pd - Power Dissipation | 33 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |