MOSFET 700V Power MOSFET Superjunction N-chan
Products specifications
Technology | Si |
Packaging | Tube |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 125 W |
Qg - Gate Charge | 18.8 nC |
Id - Continuous Drain Current | 11 A |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 700 V |
Mounting Style | Through Hole |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 330 mOhms |