MOSFET Power MOSFET, N-CHAN 700V, 3.3A, 1400mOhm
Products specifications
Pd - Power Dissipation | 38 W |
Configuration | Single |
Rds On - Drain-Source Resistance | 900 mOhms |
Channel Mode | Enhancement |
Qg - Gate Charge | 7.7 nC |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 700 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Id - Continuous Drain Current | 3.3 A |