MOSFET 100V 70A N Channel Mosfet
Products specifications
Rds On - Drain-Source Resistance | 10 mOhms |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 145 nC |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Technology | Si |
Id - Continuous Drain Current | 70 A |
Pd - Power Dissipation | 120 W, 8.3 W |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |