MOSFET 500V N Channl Mosfet
Products specifications
Packaging | Tube |
Id - Continuous Drain Current | 6 A |
Channel Mode | Enhancement |
Technology | Si |
Configuration | Single |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 20.7 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Pd - Power Dissipation | 89 W |