MOSFET 20V Dual N channel MOSFET ESD protected
Products specifications
Packaging | Reel |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 2 Channel |
Pd - Power Dissipation | 1.04 W |
Maximum Operating Temperature | + 150 C |
Configuration | Dual |
Qg - Gate Charge | 15 nC |
Id - Continuous Drain Current | 6.5 A |
Vgs - Gate-Source Voltage | 4.5 V |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Rds On - Drain-Source Resistance | 15 mOhms |