MOSFETs -60V, -14.5A, Single P-Channel Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 16.4 nC |
Mounting Style | Through Hole |
Configuration | Single |
Pd - Power Dissipation | 20 W |
Transistor Polarity | P-Channel |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Rds On - Drain-Source Resistance | 54 mOhms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Reel |
Technology | Si |
Id - Continuous Drain Current | 18 A |