MOSFETs -30V, -4.1A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Qg - Gate Charge | 8 nC |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | P-Channel |
Configuration | Single |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.56 W |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 55 mOhms |
Id - Continuous Drain Current | 4.1 A |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Packaging | Cut Tape, Reel |
Technology | Si |