MOSFETs -20V, -4.1A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Configuration | Single |
Pd - Power Dissipation | 1.56 W |
Vds - Drain-Source Breakdown Voltage | 20 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Vgs - Gate-Source Voltage | 4.5 V |
Id - Continuous Drain Current | 4.1 A |
Rds On - Drain-Source Resistance | 52 mOhms |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, Reel |
Transistor Polarity | P-Channel |
Technology | Si |
Qg - Gate Charge | 6.4 nC |