MOSFET 150V, 9A, 65mohm, N-Channel Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 12.5 W |
Configuration | Single |
Qg - Gate Charge | 37 nC |
Id - Continuous Drain Current | 9 A |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Minimum Operating Temperature | - |
Packaging | Reel |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Rds On - Drain-Source Resistance | 51 mOhms |