MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Number of Channels | 2 Channel |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Qg - Gate Charge | 20.8 nC, 9.5 nC |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 28 mOhms, 73 mOhms |
Vgs - Gate-Source Voltage | 10 V, - 4.5 V |
Packaging | Cut Tape, Reel |
Pd - Power Dissipation | 40 W |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel, P-Channel |
Id - Continuous Drain Current | 5.4 A, 4 A |
Configuration | Dual |