MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet
Products specifications
Maximum Operating Temperature | + 150 C |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 4 A |
Qg - Gate Charge | 9.6 nC |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 36.8 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Packaging | Reel |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 690 mOhms |
Configuration | Single |
Channel Mode | Enhancement |