MOSFET 600V, 7A, 0.6OHMS N Channel Power Mosfet
Products specifications
Id - Continuous Drain Current | 7 A |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Qg - Gate Charge | 13 nC |
Technology | Si |
Rds On - Drain-Source Resistance | 450 mOhms |
Packaging | Reel |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 63 W |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |