MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Qg - Gate Charge | 16 nC |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 8 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 440 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 41.7 W |
Packaging | Tube |
Technology | Si |