MOSFET 600V, 9,5A, 0,38OHMS N channel Mosfet
Products specifications
Rds On - Drain-Source Resistance | 260 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 19.4 nC |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Pd - Power Dissipation | 83 W |
Configuration | Single |
Id - Continuous Drain Current | 9.5 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Packaging | Reel |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |