MOSFET 600V, 11A, 0.38OHMS Sng N-Channel MOSFET
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 21 nC |
Channel Mode | Enhancement |
Configuration | Single |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 280 mOhms |
Pd - Power Dissipation | 62.5 W |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 11 A |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |